- 祁 琼
- 研究员
祁 琼
祁琼，女，博士，副研究员，硕士生导师。
2000年9月至2006年7月，就读于武汉理工大学材料科学与工程专业，获硕士学位。2006年9月至2009年7月，就读于国家纳米科学中心凝聚态物理专业，获博士学位。同年进入中国科学院半导体研究所工作，一直从事大功率半导体激光器的研究。作为项目负责人和骨干先后承担和完成了重大专项、国家自然科学基金等项目。
主要研究领域或方向：
高功率高亮度基模半导体激光器
大功率半导体激光器列阵及其组件
联系方式：
010-82304213 ；qiqiong@semi.ac.cn
在研/完成项目：
（1） 国家重大科学仪器设备开发专项“大功率半导体激光器综合测试仪器 ”子任务“大功率半导体激光器驱动系统（连续、准连续）研制与开发 ”，2011-2013。负责人。
（2）国家自然科学基金青年基金：高功率基横模980nm 平板耦合光波导激光器的研制，2014-2016。负责人。
代表性论文：
1. Cong Xiong, Qiong Qi*, Suping Liu and Xiaoyu Ma， Asymmetric wide-coupled waveguide 980nm laser diode with high power and low vertical divergence angle，2013 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Optical Signal Processing, Proc. of SPIE Vol. 9043 904310-1.
2. Qiao Jin, Dexing Li, Qiong Qi, Yiwei Zhang , Jun He , and Chao Jiang*，Two-Step Growth of Large Pentacene Single Crystals Based on Crystallization of Pentacene Monolayer Film，Cryst. Growth Des., 2012, 12 (11), pp 5432–5438.
3. Yuanyuan Hu , Liangmin Wang , Qiong Qi , Dexing Li , and Chao Jiang*，Charge Transport Model Based on Single-Layered Grains and Grain Boundaries for Polycrystalline Pentacene Thin-Film Transistors，J. Phys. Chem. C, 2011, 115 (47), pp 23568–23573.
4. Jiang Yeping; Qi, Qiong; Wang, Rui, et al.，Direct Observation and Measurement of Mobile Charge Carriers in a Monolayer Organic Semiconductor on a Dielectric Substrate. ACS NANO. 2011, 5：6195-6201.
5. Qi, Qiong, Yu, Aifang, Wang, Liangmin, Jiang, Chao*. Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor. Journal of Nanoscience and nanotechnology. 2010, 10: 7103-7107.
6. HuYuanyuan; Qi, Qiong; Jiang, Chao*. Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors. Appl. Phys. Lett., 2010,96:133311.
7. Qiong Qi, Aifang Yu, Peng Jiang and Chao Jiang*. Enhancement of carrier mobility in pentacene thin film transistor on SiO2 by controlling the initial film growth modes. Applied Surface Science., 2009, 255: 5096–5099.
8. Qiong Qi, Yeping Jiang, Aifang Yu, Xiaohui Qiu and Chao Jiang*. Enhancement of Electrical Conductance for Pentacene Thin Film Transistor by Controlling an Initial Layer-by-layer Growth Mode Directly on SiO2 Insulator. Jpn. J. Appl. Phys., 2009，48: 04C164-1.
9. Aifang Yu, Qiong Qi, Peng Jiang, Chao Jiang*, The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric, Synthetic Metals, 2009, 159: 1467–1470.
10. Yu Ai-Fang, Qi Qiong, Jiang Peng and Jiang Chao*,Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric , 2009 Chinese Phys. Lett. 26 078501.
