曹玉莲

中国科学院半导体研究所

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  • 曹玉莲
  • 研究员

曹玉莲

曹玉莲, 女,博士,副研究员,硕士生导师。

2000.9-2003.4在中国科学院长春光学精密机械与物理研究所攻读硕士研究生。2003.9考入中国科学院半导体研究所攻读博士学位。2006年,博士毕业后留在中国科学院半导体所纳米光电子实验室工作,主要从事光电子器件方面的研究,在量子点器激光器及InAs/GaSbII 类超晶格红外探测器等方面积累了丰富的经验。2012年6月至2014年6月在新加坡南洋理工大学电气与电子工程学院任博士后研究员(research fellow),带领课题小组从事III-V和Si基混合集成激光器的研制,2014年7月回到半导体所继续从事锑化物红外激光器及探测器方面的研究工作。目前,在国内外各种核心期刊上发表文章及专利50余篇,申请专利6项,授权2项。

主要研究方向:

1.新型半导体激光器

2.红外探测器器件工艺制作与钝化

联系方式:

E-mail:caoyl@semi.ac.cn;电话:010-82034530

承担与参与的课题:

1.“新型高亮度1.3μm InAs/ GaAs量子点锥形激光器及其相应物理机制的探索”,自然科学基金(2008-2010)。

2.“新型P型掺杂GaAs基1.3微米InAs量子点激光器研究”, “863”计划项目,(2007-2008)。

3.“半导体异质兼容集成中的新型材料系探索与特殊超晶格结构”(2010-2015),“973”计划项目。

4.“InAs/GaSb二类超晶格长波红外探测材料与器件研究”,自然科学基金,(2013-2017)。

5.“量子点红外探测器材料及器件物理研究”,自然科学基金,(2015-2018)。

近年来发表代表性论文:

1.Yu Lian Cao, Xiao Nan Hu, Yuan Bing Cheng, Hong Wang, and Qi Jie Wang,“Optimization of hybrid silicon Lasers for high-speed direct modulation”, IEEE Photonics Journal., in printing (2015).

2.Yu-Lian Cao,Hai-Ming Ji, Tao Yang, Yan-Hua Zhang, Wen-Quan Ma, and Qi-Jie Wang, Three-region characteristic temperature in p-doped quantum dot lasers, “Three-region characteristic temperature in p-doped quantum dot lasers”, Appl. Phys. Lett.,104, 041102 (2014);

3.Yu-Lian Cao,Haiming Ji, Pengfei Xu, Yongxian Gu,Wenquan Ma, and Tao Yang*, “High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability”,Opt. Lett. 37,4071(2012).

3.Y. L. Cao, T. Yang*, P. F. Xu, H. M.Ji, X. D.Wang, Y.X.Gu, W.Q.Ma, Q.Wang, and L.H.Chen “Delaying the excited state lasing of 1.3mm InAs/GaAs quantum dot lasers by facet coating”, Appl. Phys. Lett., 96,171101 (2010).

4.Yu-Lian. Cao, Peng-fei XU, Hai-Ming JI, Tao YANG*, Liang-Hui CHEN,“High brightness InAs/GaAs quantum dot tapered laser at 1.3 μm with high temperature stability” , SPIE.,784404(2010.)

5.Qiong Li, Wenquan Ma, Yanhua Zhang, Kai Cui,Jianliang Huang, Yang Wei, Ke Liu,Yulian Cao,Weiying Wang,Yali Liu, Peng Jin, “Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector,” Chin. Sci. Bull. s11434-014-0511-3, (2014).

6.X. L. Guo, W. Q. Ma*, J. L. Huang, Y. H. Zhang, Y.Wei, K. Cui, Y. L. Cao and Q. Li, “Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy” ,Semicond. Sci. Technol. 28, 045004, (2013).

7.Y. H. Zhang, W. Q. Ma*, Y. Wei, Y. L. Cao, J. L. Huang, K. Cui and X. L. Guo, “Narrow-band long-/very-long wavelength two-color type-II InAs/ GaSb superlattice photodetector by changing the bias polarity”, Appl. Phys. Lett. 100, 173511, (2012)

8.Y. Wei, W. Q. Ma*, Y. H. Zhang, J. L. Huang,Y. L. Cao and K. Cui, “High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control”, IEEE J. Quantum Electron. 48, 512, (2012)

9.J. L. Huang, W. Q. Ma*, Y. Wei, Y. H. Zhang, K. Cui,Y. L. Cao, X. L. Gao, and J. Shao, “How to use type II InAs/GaSb superlattice structure to reach detection wavelength of 2-3 μm?” Appl. Phys. Lett., IEEE J. Quantum Electron. 48, 1322, (2012)

10.J. L. Huang, W. Q. Ma*, Y. L. Cao, Y. Wei, Y. H. Zhang, K. Cui, G. R. Deng, and Y. L. Shi, “Mid wavelength type II InAs/GaSb superlattice photodetector using SiOxNy passivation,” Japn. J. Appl. Phys., 51, 074002, (2012).

11.Y. H. Zhang, W. Q. Ma*, Y. L. Cao, J. L. Huang, Y. Wei, K. Cui and J. Shao, “Long Wavelength Infrared InAs/GaSb SuperlatticePhotodetectors with InSb-Like and Mixed Interfaces” IEEE J. Quantum Electron. 47, 1475, (2011).

12.Yanhua Zhang, Wenquan Ma*, Y. L. Cao, Jianliang Huang, Yang Wei, Kai Cui, and Jun Shao, “Long Wavelength Infrared InAs/GaSb SuperlatticePhotodetectors with InSb-Like and Mixed Interfaces” IEEE J. Quantum Electron. 47, 1475, (2011).

13.P. F. Xu, T. Yang, H.M. Ji, Y. L. Cao,Y.X. Gu, Y. Liu, W.Q. Ma*, and Z.G. Wang,“Temperature-dependent modulation characteristics for1.3 mm InAs/GaAs quantum dot lasers”, J. Appl. Phys., 107, 013102 (2010).

14.JI Hai-Ming, YANG Tao*, Y. L.Cao,XU Peng-Fei, GU Yong-Xian, LIU Yu, XIE Liang, WANG Zhan-Guo, “A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser,” Chin. Phys. Lett. 27, 034209 (2010).

15.JI Hai-Ming, YANG Tao*, Y. L. Cao, XU Peng-Fei, GU Yong-Xian, MA Wen-Quan, WANG Zhan-Guo, High Characteristic Temperature 1.3 μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, Chin. J Phys. Lett. 27, 027801 (2010).