王晓磊

中国科学院微电子研究所

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13

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0

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0

  • 王晓磊
  • 副研究员
  • 北京市朝阳区北土城西路3号

简 历:

教育背景

2004年9月-2008年6月,本科,西北工业大学,应用物理学专业。

2008年8月-2013年6月,博士,中国科学院微电子研究所,微电子与固体电子学专业。

工作简历

2013年7月-2015年12月,中国科学院微电子研究所,助理研究员。

2016年1月-至今,中国科学院微电子研究所,副研究员。

社会任职: 研究方向:锗基界面物理 承担科研项目情况: 代表论著:

1. Xiaolei Wang, Zhiqian Zhao, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Chao Zhao, and Tianchun Ye, “Experimental investigation on oxidation kinetics of germanium by ozone”, Appl. Surf. Sci. 390, 472 (2016).

2. Xiaolei Wang, Jinjuan Xiang, Shengkai Wang, Wenwu Wang, Chao Zhao, Tianchun Ye, Yuhua Xiong, and Jing Zhang, “Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics”, J. Phys. D: Appl. Phys. 49, 255104 (2016).

3. Xiaolei Wang, Kai Han, Li Yuan, and Wenwu Wang, “Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3 on 4H-SiC”, J. Phys. D: Appl. Phys. 49, 215106 (2016).

4. Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Chao Zhao, and Jing Zhang, “Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness”, Surf. Sci. 651, 94 (2016).

5. Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Yuhua Xiong, Jing Zhang, and Chao Zhao, “Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation”, Appl. Surf. Sci. 357, 1857 (2015).

6. Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, and Tianchun Ye, “A possible origin of core-level shifts in SiO2/Si stacks”, Appl. Phys. Lett. 102, 041603 (2013).

7. Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, and Tianchun Ye, “Reexamination of band offset transitivity employing oxide heterojunctions”, Appl. Phys. Lett. 102, 031605 (2013).

8. Xiaolei Wang, Kai Han, Wenwu Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Xueli Ma, Chao Zhao, Dapeng Chen, and Tianchun Ye, “Band alignment of HfO2 on SiO2/Si structure”, Appl. Phys. Lett. 100, 122907 (2012).

9. Xiaolei Wang, Kai Han, Wenwu Wang, Hong Yang, Jing Zhang, Xueli Ma, Jinjuan Xiang, Dapeng Chen, and Tianchun Ye, “Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack”, Appl. Phys. Lett. 100, 102906 (2012).

10. Xiaolei Wang, Kai Han, Wenwu Wang, Xueli Ma, Jinjuan Xiang, Dapeng Chen, and Jing Zhang, “Electric Dipole at High-k/SiO2 Interface and Physical Origin by Dielectric Contact Induced Gap States”, Jpn. J. Appl. Phys. 50, 10PF02 (2011).

11. Xiaolei Wang, Kai Han, Wenwu Wang, Shijie Chen, Xueli Ma, Dapeng Chen, Jing Zhang, Jun Du, Yuhua Xiong, and Anping Huang, “Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure”, Appl. Phys. Lett. 96, 152907 (2010).

12. Xiaolei Wang, Kai Han, Wenwu Wang, Xueli Ma, Dapeng Chen, Jing Zhang, Jun Du, Yuhua Xiong, and Anping Huang, “Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device”, Appl. Phys. Lett. 97, 062901 (2010).

13. Xiaolei Wang, Wenwu Wang, Kai Han, Jing Zhang, Jinjuan Xiang, Xueli Ma, Hong Yang, Dapeng Chen, and Tianchun Ye, “Systematical Investigation and Physical Mechanism of HfO2 Gate Stacks: Band Alignment, VFB Shift and Fermi Level Pinning”, 2012 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2012.

专利申请: 获奖及荣誉:

中国科学院院长特等奖一次,中国科学院院长优秀奖一次,中国科学院朱李月华奖一次。