王文武

中国科学院微电子研究所

浏览次数

259

收藏次数

0

接洽次数

0

  • 王文武
  • 主任,所长助理
  • 研究员
  • 北京市朝阳区北土城西路3号

简 历:

2008-至今:中国科学院微电子研究所;

2006-2008年:日本半导体MIRAI项目;

2003-2006年:日本东京大学,获得工学博士学位;

1998-2003年:兰州大学,获得理学博士学位;

1997-1998年:中国空间技术研究院第510研究所;

1992-1997年:兰州大学,本科学习。

社会任职: 研究方向:纳米尺度CMOS器件与工艺技术 承担科研项目情况:

1.国家02科技重大专项项目:“22纳米关键工艺技术先导研究与平台建设”(批准号:2009ZX02035),子课题负责人,在研;

2.国家自然科学基金重点项目:“铪基金属氧化物高k栅介质的基础研究” (批准号:50932001),子课题负责人, 在研;

3.教育部留学人员回国启动基金:“纳米尺度CMOS器件金属栅极的制备和高k/金属栅集成与阈值电压控制技术”,课题负责人,在研;

4.中国科学院微电子研究所所长基金:“高k/金属栅集成与阈值电压控制技术” (批准号:08SF041001),课题负责人,在研。

代表论著:

1. Xiaolei Wang, Kai Han, Wenwu Wang, Shijie Chen, Xueli Ma, Dapeng Chen, Jing Zhang, Jun Du, Yuhua Xiong, Anping Huang, “Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure” Appl. Phys. Lett. (In press).

2. Wenwu Wang, Koji Akiyama, Wataru Mizubayashi, Minoru Ikeda, Hiroyuki Ota, Toshihide Nabatame, Akira Toriumi, “Effect of Al diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k pMOSFETs” J. Appl. Phys. 105 (2009) 064108.

3. Wenwu Wang, Wataru Mizubayashi, Koji Akiyama, Toshihide Nabatame, Akira Toriumi, “Systematic investigation on anomalous positive Vfb shift in Al-incorporated high-k gate stacks” Appl. Phys. Lett. 92 (2008) 162901.

4. Qiuxia Xu, Gaobo Xu, Wenwu Wang, Dapeng Chen, Shali Shi, Zhengsheng Han, Tianchun Ye, “Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate” Appl. Phys. Lett. 93 (2008) 252903.

5. Wenwu Wang, Toshihide Nabatame, Yukihiro Shimogaki, “Preparation of conductive HfN by post rapid thermal annealing-assisted MOCVD and its application to metal gate electrode” Microelectron. Eng. 85 (2008) 320.

6. Koji Akiyama, Wenwu Wang, Wataru Mizubayashi, Minoru Ikeda, Hiroyuki Ota, Toshihide Nabatame, Akira Toriumi, “Oxygen vacancy in HfO2/ultra-thin SiO2 gate-stack:Comprehensive understanding of Vfb roll-off ” Symp. VLSI Technology. Dig. Tech. (2008) 80.

7. Wataru Mizubayashi, Koji Akiyama, Wenwu Wang, Minoru Ikeda, Kunihiko Iwamoto, Yuuichi Kamimuta, Akito Hirano, Hiroyuki Ota, Toshihide Nabatame, Akira Toriumi, “Novel VTh tuning process for HfO2 CMOS with oxygen-doped TaCx” Symp. VLSI Technology. Dig. Tech. (2008) 42.

8. Wenwu Wang, Toshihide Nabatame, Yukihiro Shimogaki, “Dielectric evolution characteristics of HfCN metal electrode gated MOS stacks” J. Electrochem. Soc. 154 (2007) G25.

9.Koji Akiyama, Wenwu Wang, Wataru Mizubayashi, Minoru Ikeda, Hiroyuki Ota, Toshihide Nabatame, Akira Toriumi, “Vfb roll-off in HfO2 gate stack after high temperature annealing process” Symp. VLSI Technology. Dig. Tech. (2007) 72.

10.Wenwu Wang, Toshihide Nabatame, Yukihiro Shimogaki, “High temperature annealing-induced phase transformation characteristic of nitrogen-rich hafnium nitride films” Jpn. J. Appl. Phys. 45 (2006) L1183.

专利申请:

申请发明专利30余项,其中美国专利2项,日本专利2项,国内专利30余项。

获奖及荣誉:

1.2007年获得日本半导体MIRAI项目优秀奖,获奖项目:“Mechanism and control for the anomalous threshold voltage variation in metal/high-k gate stack”,本人排序:2;

2.2008年获得日本半导体MIRAI项目最优秀奖,获奖项目:“Clarification and quantification of interfacial dipole effect in high-k gate stack”,本人排序:9。