刘媛媛

中国科学院半导体研究所

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  • 刘媛媛
  • 研究员

刘媛媛

刘媛媛,女,博士,正高级工程师,硕士生导师。

1997年毕业于山西大学电子信息工程系,获学士学位。2000年山西大学光电研究所获光学专业硕士学位。2003年7月在中国科学院半导体研究所毕业获微电子学与固体电子学博士学位,同年进入中国科学院半导体研究所工作至今。一直从事半导体激光器泵浦源、大功率半导体激光器及其光束整形方面的研究工作。作为项目骨干和项目负责人先后完成和承担多项科研项目、国家自然科学基金项目等。

目前主要研究领域方向:

硅基混合集成器件研究。

联系方式:

E-mail:liuyy@semi.ac.cn; 电话:010-82305405

在研/完成主要项目:

国家自然科学基金:硅基混合集成的微芯片激光器相关基础研究,(2013年-2016年),项目负责人

代表性论著(EI收录):

1. Application of pump cavity in LD side-pumped laser head

Liu, Yuan-Yuan (Inst. of Semi-conduct., Chinese Acad. of Sci., Beijing 100083, China); Fang, Gao-Zhan; Ma, Xiao-Yu; Xiao, Jian-Wei Source:Zhongguo Jiguang/Chinese Journal of Lasers, v 31, n 8, p 907-910, August 2004 Language: Chinese

2. Laser diode side-pumped CW Nd:YAG lasers

Liu, Yuan-Yuan (Inst. of Semi-conduct., Chinese Acad. of Sci., Beijing 100083, China); Fang, Gao-Zhan; Liu, Bin; Wang, Xiao-Wei; Ma, Xiao-Yu; Xiao, Jian-Wei Source:Zhongguo Jiguang/Chinese Journal of Lasers, v 30, n 7, p 577-580, July 2003 Language: Chinese

3. Design of side-pumped Nd:YAG lasers

Liu, Yuan Yuan(Institute of Semiconductor, CAS, Beijing, 100083, China); Fang, Gaozhan; Ma, Xiaoyu; Xiao, Jianwei Source:Proceedings of SPIE - The International Society for Optical Engineering, v 4914, p 481-484, 2002

4. Slant-face fiber side coupling of vertical cavity surface emitting laser

Liu, Yuan Yuan (Institute of Semiconductors, The Chinese Academy of Sciences, Beijing, 100083, China); Liu, Rui Cong; Chen, Xue Source:Applied Mechanics and Materials, v 509, p 155-158, 2014, Components, Packaging and Manufacturing Technology II

5. Study on polarization multiplexing technology for high-power diode laser arrays

Han, Lin (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Yuan-Yuan; Wang, Cui-Luan; Feng, Xiao-Ming; Wang, Xiao-Wei; Liu, Su-Ping; Ma, Xiao-Yu Source:Bandaoti Guangdian/Semiconductor Optoelectronics, v 29, n 6, p 831-834, December 2008 Language: Chinese

6. Polarization multiplexing of high power diode laser arrays by using a birefringent crystal

Han, Lin (Institute of semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Yuan-Yuan; Wang, Cui-Luan; Wu, Peng; Feng, Xiao-Ming; Wang, Xiao-Wei; Liu, Su-Ping; Ma, Xiao-Yu Source:Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 19, n 12, p 1576-1579, December 2008 Language: Chinese

7. High power laser diode array with 60% electro-optical efficiency

Wang, Jun (National Engineering Research Center for Optoelectronic Device, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Bai, Yiming; Chong, Feng; Liu, Yuanyuan; Feng, Xiaoming; Wang, Yonggang; Zhang, Guangze; Liu, Suping; Ma, Xiaoyu Source:Zhongguo Jiguang/Chinese Journal of Lasers, v 35, n 9, p 1323-1327, September 2008 Language: Chinese

8. Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers

Gao, Zhuo (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Jun; Xiong, Cong; Liu, Yuanyuan; Liu, Suping; Ma, Xiaoyu Source:Journal of Semiconductors, v 33, n 1, January 2012

9. Fiber array packaged bar of output power up to 30 W

Wang, Xiaowei (Ctr. for Optoelectronic Eng., Inst. of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Fang, Gaozhan; Ma, Xiaoyu; Feng, Xiaoming; Sun, Haidong; Liu, Yuanyuan; Liu, Bin; Xiao, Jianwei Source:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 25, n 5, p 579-582, May 2004 Language: Chinese

10. Optimal distance from high power laser diode to cylindrical microlens in a coupling system

Wang, Xiaowei (Optoelectron. Eng. Res. Ctr., Inst. of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Ma, Xiaoyu; Xiao, Jianwei; Fang, Gaozhan; Feng, Xiaoming; Liu, Yuanyuan; Liu, Bin Source:Chinese Optics Letters, v 1, n 2, p 96-98, February 2003

11. 4-W single transverse mode Yb3+-doped fiber laser pumped by 915-nm laser diode array

Feng, Xiaoming (National Research Center for Optoelectronic Engineering, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaowei; Fang, Gaozhan; Liu, Yuanyuan; Wang, Ying; Ma, Xiaoyu Source:Chinese Optics Letters, v 3, n 5, p 251-252, May 2005

12. High-power ridge-waveguide tapered diode lasers at 980 nm

Li, Jing (National Engineering Research Center for Opto-Electronic Devices, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Ma, Xiaoyu; Liu, Yuanyuan Source:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 28, n 5, p 645-650, May 2007

13. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section

Li, Jing (National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Yuanyuan; Ma, Xiaoyu Source:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 28, n 8, p 1302-1306, August 2007 Language: Chinese

14. Fiber coupling of laser diode bar to multimode fiber array

Wang, Xiaowei (Inst. of Semi-conduct., Chinese Acad. of Sci., Beijing 100083, China); Xiao, Jianwei; Ma, Xiaoyu; Wang, Zhongming; Fang, Gaozhan; Feng, Xiaoming; Liu, Yuanyuan; Liu, Bin; Zhang, Jingming Source:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 23, n 5, p 464-467, May 2002

15. High power 808 nm AlGaAs/GaAs quantum well laser diodes with broad waveguide

Fang, Gaozhan (Inst. of Semiconduct., Chinese Acad. of Sci., Beijing 100083, China); Xiao, Jianwei; Ma, Xiaoyu; Feng, Xiaoming; Wang, Xiaowei; Liu, Yuanyuan; Liu, Bin; Tan, Manqing; Lan, Yongsheng Source:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 23, n 8, p 809-812, August 2002

16. High power 885 nm laser diodes with graded optical expand structures for small divergence angle

Wang, Jun (National Engineering Research Center for Optoelectronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Bai, Yiming; Liu, Yuanyuan; He, Weili; Xiong, Cong; Wang, Cuiluan; Feng, Xiaoming; Zhong, Li; Liu, Suping; Ma, Xiaoyu Source:Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 40, n 12, p 2382-2387, December 2011 Language: Chinese

17. Mechanisms of high efficiency for 980 nm diode lasers with asymmetric waveguide structure

Wang, Jun (National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Bai, Yiming; Liu, Yuanyuan; Chong, Feng; Xiong, Cong; Wang, Cuiluan; Feng, Xiaoming; Zhong, Li; Liu, Suping; Ma, Xiaoyu Source:Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, v 22, n 8, p 1785-1789, August 2010 Language: Chinese

18. Ultra-broadband and ultra-low-loss photonic crystal with band-flatness waveguide 60 bend obtained based on lattice-shifted optimization

Zhou, Jian (State Key Laboratory of Information Photonics and Optical Communications, School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China); Tian, Huiping; Yang, Daquan; Liu, Yuanyuan; Liu, Qi; Ji, Yuefeng Source:Optics Communications, v 322, p 227-233, July 1, 2014

19. Ultra-compact low-voltage and slow-light MZI electro-optic modulator based on monolithically integrated photonic crystal

Zhang, Yanhong (State Key Laboratory of Information Photonics and Optical Communications, School of Information and Telecommunication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China); Tian, Huiping; Yang, Daquan; Liu, Hongzhan; Liu, Yuanyuan; Ji, Yuefeng Source:Optics Communications, v 315, p 138-146, 2014

20. Study of the beam shaping of laser diode arrays using two parallel plane mirrors

Wang, Cuiluan (Institute of Semiconductor, Chinese Acad. of Sci., Beijing 100083, China); Han, Lin; Wu, Peng; Liu, Yuanyuan; Li, Wei; Feng, Xiaoming; Wang, Yonggang; Liu, Suping; Ma, Xiaoyu Source:Zhongguo Jiguang/Chinese Journal of Lasers, v 36, n 5, p 1097-1100, May 2009 Language: Chinese