汪连山

中国科学院半导体研究所

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  • 汪连山
  • 研究员

汪连山

汪连山,男,博士,研究员,博士生导师。

1999年2月毕业于中国科学院半导体研究所,获半导体材料工学博士学位。1998年8月至1999年8月在香港理工大学电子信息工程系做访问学者,主要研究AlGaN/GaN紫外探测器。1999年10月至2006年10月在新加坡材料研究与工程研究院(IMRE)工作,任职Research Scientist,主要研究宽带隙氮化物半导体材料与器件,先后实现了GaN基蓝光、绿光及紫外光发光二极管, 并与日本富士通量子器件(Fujistu Quantum Device)公司合作率先研制成功InGaN蓝光激光器。2006年10月至2011年8月为华中科技大学武汉光电国家实验室(筹)教授,主要从事半极性面氮化镓材料、图形衬底制备技术、ZnO纳米结构制备技术等研究工作,其中,2009年2月至7月在英国巴斯大学电子电机工程系做访问教授,主要研究GaN体衬底HVPE制备和自分离技术。2011年9月至2013年4月为中国科学院半导体研究所半导体照明中心研究员,主要从事基于金属基板和表面光子晶体的高效大功率LED芯片研发及产业化。2013年5月内调至半导体材料科学重点实验室,主要从事半极性、非极性氮化物半导体材料与器件、纳米材料与器件以及和新型太阳能电池制备技术研究。迄今发表学术论文120多篇,累计引用750余次,取得发明专利15项,并受邀为Applied Physics Letters、IEEE Photonics Technology Letters、Electrochemical Society (ECS) Journal of Solid-State Science and Technology、Electrochemical and Solid State Letters、Materials Science and Engineering B、Applied Surface Science、Crystal Research & Technology、Physica Status Solidi (a)、Science China、《光学学报》、《中国科学》、《发光学报》等期刊论文评审人和广东省科技咨询及产学研项目评审专家。

主要研究领域或方向:

氮化物半导体材料、器件与应用

纳米结构材料制备技术与应用

新型太阳能电池制备技术与应用

联系方式:

电话:010-82304236

电子邮箱:ls-wang@semi.ac.cn

网页:http://people.ucas.ac.cn/~wls20130612

在研/已完成项科研目:

国家自然科学基金面上项目“半极性GaN基黄橙光材料研究”(2018.01-2021.12, 直接经费63万元)

国家重大科研仪器研制项目“薄膜生长缺陷跨时空尺度原位/实时监测与调控实验装置”(2018.01-2022.12, 经费634.55万元)

科技部重大科技专项项目“第三代半导体核心关键设备-第三课题“面向大尺寸AlN单晶的PVT和高温HVPE设备研制”(2017.07-2020.12, 经费82.8万元)

南昌大学国家硅基LED工程技术研究中心开放课题“硅衬底非/半极性GaN材料研究”(2017.09-2019.08, 经费100万元)

广东省重大科技专项“面向可见光通信的宽带高效LED器件核心技术研究”( 2015.01-2017.12, 经费100万元)

国家高新技术研究发展计划(863计划)“新一代移动通信基站氮化镓射频功率放大器”(2015.01-2017.12, 经费95万元)

国家高新技术研究发展计划项目(863计划) “面向新型绿光器件的高In组分氮化物材料的生长技术研究”(2014.01-2016.12, 经费139.5万元)

广东省中国科学院全面战略合作(省院产学研)项目“大尺寸图形衬底制备技术与工艺验证”(2014.10-2016.12, 经费25万元)

国家自然科学基金面上项目“半极性面偏振光LED 外延技术及性能研究”(2013.01-2016.12,经费80万元)

广东省战略新兴产业LED项目“基于电镀镍金属基板和表面光子晶体结构的高效大功率LED 芯片研发及产业化”(2013.01-2015-06,经费240万元)

973项目“MOCVD新型反应腔设计、LED缺陷抑制和量子效率调控”(2014.01-2018.08, 经费520万元)

863项目“基于图形衬底的高效白光LED外延芯片产业化制备技术研究”(2011.01-2013.12, 经费91.7万元)

国家科学基金面上项目“半极性小面InGaN量子阱结构生长与多色光合成研究”(2008.1-2010.12, 经费30万元)

湖北省科技专项项目“GaN基LED外延片的生长技术及其大功率芯片的研究及产业化(2008.1-2010.12, 经费500万元)

代表性论著:

Yulin Meng, Lianshan Wang,* Guijuan Zhao, Fangzheng Li, Huijie Li, Shaoyan Yang,and Zhanguo Wang, “Red Emission of InGaN/GaN Multiple-Quantum-WellLight-Emitting Diode Structures With Indium-Rich Clusters”, Phys. Status Solidi A 215(23), 1800455 (2018)

Lianshan Wang*, Guijuan Zhao, Yulin Meng, Huijie Li, Shaoyan Yang, Zhanguo Wang, “Comparative investigation of semiploar (11-22) GaN layers on m plane sapphire with different nucleation layers”, Journal of Nanoscience and Nanotechnology,18,7446 (2018)

Fangzheng Li, Lianshan Wang*, Guijuan Zhao, Yulin Meng, Huijie Li, Yanan Chen,Shaoyan Yang, Peng Jin, and Zhanguo Wang,“The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition”, Journal of Nanoscience and Nanotechnology,18, 7484 (2018)

Guijuan Zhao, Huijie Li, Lianshan Wang , Yulin Meng, Fangzheng Li, Hongyuan Wei, Shaoyan Yang and Zhanguo Wang, “Measurement of semipolar (11-22) plane AlN/GaN Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy”, Applied Physics A: Materials Science & Processing, 124 (2), 130 (2018)

Guijuan Zhao, Lianshan Wang*, Huijie Li, Yulin Meng, Fangzheng Li, Shaoyan Yang, Zhanguo Wang, “Structural and Optical Properties of Semi-polar (11-22) InGaN/GaN Green Light-Emitting Diode Structure”, submitted to Appl. Phys. Lett. 112, 052105 (2018)

Fangzheng Li, Lianshan Wang, Guijuan Zhao, Yulin Meng, Huijie Li,Shaoyan Yang, Zhanguo Wang, “Performance enhancement of AlGaN-based ultravioletlight-emitting diodes by inserting the last quantum well intoelectron blocking layer”, Superlattices and Microstructures,110C (2017) 324-329 (通讯作者)

Guijuan Zhao, Huijie Li, Lianshan Wang*, Yulin Meng, Zesheng Ji, Fangzheng Li,Hongyuan Wei, Shaoyan Yang, Zhanguo Wang, “Anisotropically biaxial strain innon-polar (112–0) plane InxGa1−xN/GaN layers investigated by X-rayreciprocal space mapping”, Scientific Reports, 7,4497-(2017)

Zesheng Ji, Lianshan Wang*, Guijuan Zhao, Yulin, Meng, Fangzheng Li, Huijie, Li, Shaoyan, Yang, Zhanguo Wang, “Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition”, Chinese Physics B26, 078102, (2017)

Huijie Li, Guijuan Zhao, Lianshan Wang, Zhen Chen and Shaoyan Yang, “Morphology Controlled Fabrication of InNNanowires on Brass Substrates”, Nanomaterials, 6(11),195-1-14, (2016)

Huijie Li, Guijuan Zhao, Hongyuan Wei, Lianshan Wang, Zhen Chen and Shaoyan Yang, “Growth of Well-Aligned InN Nanorods onAmorphous Glass Substrates”, Nanoscale Research Letters 11(1), 270-1-7(2016)

Guijuan Zhao, Xiaoqing Xu, Huijie Li, Hongyuan Wei, Dongyue Han, Zesheng Ji, Yulin Meng,Lianshan Wang & Shaoyan Yang, “The immiscibility of InAlN ternaryalloy”, Scientific Reports,6, 26600-1-6 (2016)

Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), and Lian-Shan Wang(汪连山), “Aluminum incorporation efficiencies in A- and C-planeAlGaN grown by MOVPE”, Chinese Physics B25(4), 048105-1-6 (2016)

Guijuan Zhao, Lianshan Wang*, Shaoyan Yang, Huijie Li, Hongyuan Wei, Dongyue Han, and Zhanguo Wang “Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers”, Scientific Reports,6, 20787-1-10 (2016)

Huijie Li; Guijuan Zhao, Susu Kong,Dongyue Han, Hongyuan Wei, Lianshan Wang, Zhen Chen, Shaoyan Yang,“Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays”, Nanoscale, 7(39), pp 16481-16492 (2015)

HuijieLi, GuipengLiu, GuijuanZhao, HongyuanWei, LianshanWang, ShaoyanYang, Zhen Chen, ZhanguoWang, “Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures”, PhysicaE, 66, 116–119(2015)

WangJian-Xia (王建霞),WangLian-Shan*(汪连山), Zhang Qian (张谦),Meng Xiang-Yue(孟祥岳),YangShao-Yan(杨少延),ZhaoGui-Juan (赵桂娟),LiHui-Jie(李辉杰),WeiHong-Yuan(魏鸿源),and Wang Zhan-Guo(王占国), “the Effect of the thickness of InGaN interlayer on the a-plane GaN epilayers”, Chinese Physics B 24(2), 026802-1-5 (2015)

Susu Kong, Hongyuan Wei,Shaoyan Yang,Huijie Li, Yuxia Feng, Zhen Chen, Xianglin Liu, Lianshan Wang and Zhanguo Wang, “Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy”, RSC Adv.4(97), 54902-54906 (2014)

Yuxia Feng, Hongyuan Wei, Shaoyan Yang, Zhen Chen,Lianshan Wang, Susu Kong, Guijuan Zhao, Xianglin Liu, “Competitive growth mechanisms of AlN on Si (111) by MOVPE”, Scientific reports4,6416-1-5 (2014)

Huijie Li, Guijuan Zhao, Guipeng Liu, Hongyuan Wei, Chunmei Jiao, Shaoyan Yang,Lianshan Wang, and Qinsheng Zhu, “Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces”, Journal of Applied Physics 115(19), 193704 (2014)-1-5

HuijieLi, ChangboLiu, GuipengLiu, Hongyuanwei, ChunmeiJiao, Jianxia Wang, HengZhang, DongdongJin, YuxiaFeng, ShaoyanYang, Lianshan Wang, QinshengZhu, Zhan-GuoWang, “Single-crystallineGaNnanotubearraysgrownon c-Al2O3 substratesusing InNnanorodsastemplates”, J. CrystalGrowth, 389, 1–4(2014)

Wang Jian-Xia(王建霞), Yang Shao-Yan(杨少延), Wang Lian-Shan*(汪连山), Li Hui-Jie(李辉杰), Zhang Gui-Juan(赵桂娟), Zhang Heng(张恒), Wei Hong-Yuan(魏鸿源),Jiao Chun-Mei(焦春美), Zhu Qin-Sheng(朱勤生), and Wang Zhan-Guo(王占国), “Effects of V/III ratio on a-plane GaN epilayers withan InGaN interlayer”, Chinese Physics B 23(2), 026801(2014)

Dong-Dong Jin, Lian-shan Wang*, Shao-Yan Yang, Liu-Wan Zhang, Hui-jie Li,Heng Zhang,Jian-xia Wang, Ruo-fei Xiang, Hong-yuan Wei, Chun-mei Jiao,Xiang-Lin Liu, Qin-Sheng Zhu, and Zhan-Guo Wang, “Anisotropic scattering effect of the inclined misfit dislocationon the two-dimensional electron gas in Al(In)GaN/GaN heterostructures”, Journal of Applied Physics, 115(4), 043702-1-4 (2014)

Huijie Li, Guipeng Liu, Hongyuan Wei, Chunmei Jiao, Jianxia Wang, Heng Zhang,Dong Dong Jin, Yuxia Feng, Shaoyan Yang, Lianshan Wang, Qinsheng Zhu,and Zhan-Guo Wang, “Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors”, Applied Physics Letters, 103(23), 232109-1-4 (2013)