- 王开友
- 研究员
王开友
王开友，男，博士，研究员，博士生导师。
国家杰出青年基金获得者，现任半导体超晶格国家重点实验室主任。
2005年在英国诺丁汉大学天文物理学院获得哲学博士学位。2005年3月－5月在诺丁汉大学作研究助理，2005年6月－2009年3月在日立剑桥研究实验室作Researcher。曾经两次在波兰科学院物理研究所做访问研究，并作为访问教授在丹麦玻尔研究所进行短期访问研究。2009年加入半导体研究所超晶格国家重点实验室工作，并于2012年获得国家自然科学基金委的国家杰出青年基金资助。迄今在国际核心刊物和国际会议上合作发表了100多篇科技论文，发表的文章被引用3800多次。在27届国际半导体会议上被国际纯物理和应用物理组织（IUPAP）评为“青年优秀作者奖”；且获得第二届“中国海外优秀自费留学生奖”，2014年获得中国侨界“（创新人才）贡献奖”。当前是<<Chinese Phys. B>>、<<物理学报>>及<<凝聚态物理学进展>>的编委。
当前主要研究兴趣：
自旋电子学微纳器件及低维纳米器件的物理特性研究
现招收硕博连读生、博士生及博士后
联系方式：
中国科学院半导体研究所半导体超晶格国家重点实验室（邮政编码：100083）
E-mail:kywang@semi.ac.cn；电话：(010)82304622；
传真：(010)82305056
课题组主页：http://ewormhole.com/lab/detail/1581
在研/完成主要项目：
1）科学院重点研发项目：“非易失磁逻辑和存储一体化器件原理研究” （2017-2022 主持）
2）国家自然科学基金委面上项目：“新型二维晶体及其异质结光电探测器的原理及功能特性研究”（2018-2021 主持）
3）国家自然科学基金委面上项目：“电场调控微纳器件的磁特性及电场/电流双重调控器件磁特性研究”（2015-2018主持）
4）科技部“973”项目：“2.8-4微米室温高性能半导体激光器材料和器件制备研究”（2014-2018课题负责人）
5）国家自然科学基金委杰出青年基金：“铁磁半导体及碳基自旋电子学”（2013-2016 主持）
6）国家自然科学基金委面上项目：“铁磁半导体异质结器件中的基本物理特性研究”（2012-2015 主持）
7）科技部“973”项目：“光和固态微结构中集体激发强耦合的量子调控”（2011-2015 参加）
部分代表性论文：
(1)“Complementary logic with a spin” Kaiyou Wang*, Nature Electronics, 1(2018)378.
(2) “Adjustable current-induced magnetization switching utilizing interlayer exchange coupling”, Yu Sheng, Kevin William Edmonds, Xingqiao Ma, Houzhi Zheng, Kaiyou Wang*,Advanced Electronic Materials,https://doi.org/10.1002/aelm.201800224.
（3）“High performance, self-driven photodetector based on graphene sandwiched GaSe/WS2 heterojunction” QuanShan Lv, Faguang Yan, Xia Wei, and Kaiyou Wang*, Advanced Optical Materials, 6(2018) 1700490.
（4）“Electric field control of deterministic currentinduced magnetization switching in a hybrid ferromagnetic/ferroelectric structure” Kaiming Cai†, Meiyin Yang†, Hailang Ju, Sumei Wang, Yang Ji, Baohe Li,Kevin William Edmonds, Yu Sheng, Bao Zhang, Nan Zhang, Shuai Liu, Houzhi Zheng and Kaiyou Wang*，Nature Materials, 16 (2017)712.
（5）“Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions”，Xia Wei, Faguang Yan, Quanshan Lv, Chao Shen and Kaiyou Wang*，Nanoscale, 9(2017) 8388.
（6）“Wafer-scale two-dimensional ferromagnetic FeGeTe thin films” Shanshan Liu, Xiang Yuan, Yichao Zhou,Yu Sheng,Ce Huang, Enze Zhang,Jiwei Ling,Yanwen Liu,Weiyi Wang,Cheng Zhang, Jin Zou, Kaiyou Wang*,Faxian Xiu*, NPJ 2D Materials and Applications 1(2017)30.
（7） “Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures”, Faguang Yan, Lixia Zhao, Amalia Patanè, PingAn Hu, Xia Wei,Wengang Luo, Dong Zhang, Quanshan Lv, Qi Feng, Chao Shen,Kai Chang, Laurence Eavesand Kaiyou Wang*, Nanotechnology, 28 (2017) 27LT01.
（8）“Piezo Voltage Controlled Planar Hall Effect Devices”, Bao Zhang, Kang-Kang Meng, Mei-Yin Yang, K. W. Edmonds, Hao Zhang, Kai-Ming Cai,Yu Sheng, Nan Zhang, Yang Ji, Jian-Hua Zhao, Hou-Zhi Zheng & Kai-You Wang*, Scientific Reports, 6 (2016)28458.
（9）“Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices” Meiyin Yang, Kaiming Cai, Hailang Ju, Kevin William Edmonds, Guang Yang, Shuai Liu, Baohe Li, Bao Zhang, Yu Sheng, Shouguo Wang, Yang Ji & Kaiyou Wang*, Scientific Reports, 6 (2016)20778.
（10）“Rational Design of Ultralarge Pb1-xSnxTe Nanoplates for Exploring Crystalline Symmetry-Protected Topological Transport” Qisheng Wang# , Kaiming Cai# , Jie Li , Yun Huang , Zhenxing Wang , Kai Xu , Feng Wang , Xueying Zhan , Fengmei Wang , Kaiyou Wang ,* and Jun He*, Advanced Materials, 28(2016)617.
(11) “Charge Trap Memory Based On Few-Layered Black Phosphorus” Qi Feng, Faguang Yan, Wengang Luo and Kaiyou Wang*, Nanoscale, 8(2016)2686.
(12) “Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors” Yufei Cao, Kaiming Cai, Pingan Hu, Lixia Zhao, Tengfei Yan, Wengang Luo, Xinhui Zhang, Xiaoguang Wu, Kaiyou Wang* & Houzhi Zheng，Scientific Reports, 5 (2015)8130.
（13）“Gate Tuning of High-Performance InSe-Based Photodetectors UsingGraphene Electrodes”, W. G. Luo, Y. F. Cao, P. A. Hu, K. M. Cai, Q. Feng, F. G. Yan, T. F. Yan, X. H. Zhang and K. Y. Wang*, Adv. Opt. Mater., 3(2015)1418.
（14）“Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As”Yuanyuan Li, Y. F. Cao, G. N. Wei, Yanyong Li, Y. Ji, K. Y. Wang*, K. W. Edmonds,R. P. Campion, A. W. Rushforth, C. T. Foxon, and B. L. Gallagher，Appl. Phys. Lett.,103 (2013)022401.
(15)“Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices”K. Y. Wang, A. M. Blackburn,H. F. Wang, J. Wunderlich, and D. A. Williams, Appl. Phys. Lett.,102 (2013)093508.
(16)“Spin-Transfer-Torque-Assisted Domain-Wall Creep in a Co/Pt Multilayer Wire”L. San Emeterio Alvarez, K.-Y. Wang, S. Lepadatu, S. Landi, S. J. Bending and C.H. Marrows, Phys. Rev. Lett. 104 (2010)137205.
(17) “Current-driven domain wall motion in GaMnAsP across a wide temperature range”K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, and B. L. Gallagher, Appl. Phys. Lett.97 (2010) 262102.
（18）“Magnetic reversal under external field and currentdriven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning”K Y Wang, A C Irvine, J Wunderlich, K W Edmonds, A W Rushforth, R P Campion, C T Foxon, D A Williams and B L Gallagher, New Journal of Physics 10 (2008) 085007 (special issue) (invited paper)
(19) “Singlet-triplet physics and shell filling in carbon nanotube double quantum dots”H. I. Jorgensen, K. Grove-Rasmussen, K. Y. Wang, A. M. Blackburn, K. Flensberg, P. E. Lindelof, and D. A. Williams, Nature Physics, 4 (2008) 536.
(20) “Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor”J. Wunderlich, T. Jungwirth, B. Kaestner, A. C. Irvine, A. B. Shick, N. Stone, K. Y. Wang, U. Rana, A. D. Giddings, C. T. Foxon, R. P. Campion, D. A. Williams, and B. L. Gallagher, Phys. Rev. Lett. 97 (2006) 077201.
(21) “Control of coercivities in (Ga,Mn)As thin films by small concentrations of MnAs nanoclusters”K. Y. Wang, M. Sawicki, K. W. Edmonds, R. P. Campion, A. W. Rushforth, A. A. Freeman, C. T. Foxon, B. L. Gallagher, and T. Dietl, Appl. Phys. Lett.88 (2006) 022510.
(22) “Catalytic chemical vapour deposition of single-wall carbon nanotubes at low temperatures” M. Cantoro, S. Hofmann, S. Pisana, V. Scardaci, A. Parvez, C. Ducati, A. C. Ferrari, A. M. Blackburn, K. Y. Wang, and J. Robertson, Nano Lett. 6 (2006) 1107.
(23) “Spin reorientation transition in single-domain (Ga,Mn)As”K. Y. Wang, M. Sawicki, K.W. Edmonds, R.P. Campion,S. Maat, C.T. Foxon, B.L. Gallagher and T. Dietl, Phys. Rev. Lett.95(2005)217204
(24) “(Ga,Mn)As grown on (311) GaAs substrates: Modified Mn incorporation and magnetic anisotropies”K. Y. Wang, K. W. Edmonds, L. X. Zhao, M. Sawicki, R. P. Campion, B. L. Gallagher and C. T. Foxon, Phys. Rev. B72(2005)115207.
(25) “Anisotropic magnetoresistance and magnetic anisotropy in high quality (Ga,Mn)As films” K. Y. Wang, K.W. Edmonds, R.P. Campion, L. X. Zhao, C. T. Foxon and B. L. Gallagher, , Phys. Rev. B 72 (2005) 085201.
(26) “Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors”T. Jungwirth, K. Y. Wang, J. Masek, K. W. Edmonds, J. Konig, J. Sinova, M. Polini, N. A. Goncharuk, A. H. MacDonald, M Sawicki, R. P. Campion, L. X. Zhao, C. T. Foxon, B. L. Gallagher, Phys. Rev. B72 (2005) 165204.
(27) “In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films”
M. Sawicki, K. Y. Wang, K.W. Edmonds, R.P. Campion, C.R. Staddon, N.R.S. Farley, C.T. Foxon, E. Papis, E. Kamińska,A. Pitrowska, T. Dietl and B.L. Gallagher, Phys. Rev. B, 71 (2005) 121302.
(28) “Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions” A. D. Giddings, M. N. Khalid, J. Wunderlich, S. Yasin, R. P. Campion, K. W. Edmonds, J. Sinova, T. Jungwirth, K. Ito, K. Y. Wang, D. Williams, B. L. Gallagher, C. T. Foxon, Phys. Rev. Lett., 94 (2005) 127202.
(29) “Mn Interstitial Diffusion In (Ga,Mn)As” K.W. Edmonds, P. Bogusÿawski, K. Y. Wang, R.P. Campion, S.N. Novikov, N.R.S. Farley, B.L. Gallagher, C.T. Foxon, M. Sawicki, T. Dietl, M. Buongiorno Nardelli, and J. Bernholc, Phys. Rev. Lett. 92, (2004) 037201.
