尚海平

中国科学院微电子研究所

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  • 尚海平
  • 副研究员
  • 北京市朝阳区北土城西路3号

简 历:

教育背景

2005/7-2011/6,中国科学院微电子研究所,微电子与固体电子学,硕博连读/工学博士

1998/7-2002/6,东南大学,应用物理系,学士

工作简历

2014/12–至今:中国科学院微电子研究所,智能感知研发中心,副研究员;

2011/07–2014/12:中国科学院微电子研究所,集成电路先导工艺研发中心,助理研究员;

2002/07-2004/05:无锡华润上华半导体有限公司,工艺工程师

社会任职: 研究方向:

MEMS传感器和微纳工艺技术

承担科研项目情况:

1. 中国科学院战略性先导科技专项A,高量程低漂移MEMS压力传感器研制,主持

2. 国家重点研发计划,深海微汞膜电极研制,主持

3. 国家重点研发计划,高度集成的温盐溶氧传感器加工技术研究

4. 国家重大专项(04课题),MEMS 典型产品技术与设计服务平台,整套光读出红外焦平面阵列工艺研发;

5. 国家863计划/重点自然科学基金,无线、无源、多参数微纳传感器与系统,温湿压传感器芯片研发;

6. 国家973计划,新一代集成技术基础问题研究,肖特基源/漏FinFET器件研发;

7. 国家(863)计划,12BLS04101,0.07微米CMOS关键技术

8. 地方任务,工业压力传感器研发

代表论著:

1. Design optimization and performance analysis of deformed optical readout focal plane array,Jianyu Fu,Haiping Shang*,Haitao Shi, Zhigang Li, Ou Yi, Dapeng Chen and Qingchuan Zhang J. Micromech. Microeng.,25 (2015) 065012 (9pp),2015

2. Improving stress stability in low-pressure chemical vapor deposited silicon dioxide films by ion implantation,Jianyu Fu,Haiping Shang*,Changqing xie,Zhigang Li,Dapeng Chen,Thin Solid Films,598 (2016) 103–108,2016

3. Optical sensitivity non-uniformity analysis and optimization of a tilt optical readout focal plane array,Jianyu Fu, Haiping Shang, Haitao Shi, Zhigang Li, Yi Ou, Dapeng Chen and Qingchuan Zhang',J. Micromech. Microeng,26 (2016) 025001 (10pp),2016

4. Thermal annealing effects on the stress stability in silicon dioxide films grown by plasma-enhanced chemical vapor deposition,Jianyu Fu*, Haiping Shang, Zhigang Li,Weibing Wang,Dapeng Chen,Microsyst Technol,(2017) 23:2753–2757,2017

5. 新型金属源/漏工程新进展,尚海平,徐秋霞,微电子学,第38卷,第4期,2008年 2008

6. 镍硅化物工艺新进展,尚海平,徐秋霞,微电子学,第39卷,第6期,2009年,2009

7. Two-step Ni Silicide process and influence of protective N2 gas,Shang Haiping, Xu Qiuxia*,Journal of Semiconductors, Volume 30, Issue 9, 2009, 096002-1,2009

8. Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process, Journal of Semiconductors,Shang Haiping, Xu Qiuxia*,Journal of Semiconductors, Volume 30, Issue 10, 2009, 106001-4,2009

9. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs,Shang Haiping, Xu Qiuxia*,Journal of Semiconductors, Volume 31, Issue 5,2010,056001-6,2010

10. Elimination of initial stress-induced curvature in a micromachined bi-material composite-layered cantilever,Ruiwen Liu、 Binbin Jiao、 Yanmei Kong、Zhigang Li、Haiping Shang、Dike Lu、Chaoqun Gao and Dapeng Chen,J. Micromech. Microeng. 23 (2013) 095019 (12pp),2013

11. Low atomic number silicon nitride films for transmission electron microscopy,Jianyu Fu,*, Wenjuan Xiong,*, Haiping Shang, Ruiwen Liu, Junfeng Li, Weibing Wang, Wenwu Wang and Dapeng Chen,Materials Science in Semiconductor Processing,89 (2019) 1–5,2019

12. A substrate-free optical readout focal plane array with a heat sink structure,Liu Rmwen、 Kong Yanmei、Jiao Binbin 、 Li Zhigang 、Shang Haiping、 Lu Dike 、Gao Chaoqun、 Chen Dapeng and Zhang Qingchuan,Journal of Semiconductors, Volume 34, Number 2,2013

13. Feasibility Study of All-SiC Pressure Sensor Fabrication without Deep Etching,Fengwen Mu、Yechao Sun、Haiping Shang、Yinghui Wang、Tadatomo Suga、eibing Wang and Dapeng Chen,ICEP-IAAC 2018,2018

14. Mercury-plated iridium-based microelectrode arrays for trace metal detection,Zhi Cao, Haiping Shang*, Yinghui Wang, and Weibing Wang,ICEPT 2018,2018

15. Mercury-plated iridium-based microelectrode arrays for trace metal detection,Zhi Cao, Haiping Shang*, Yinghui Wang, and Weibing Wang,IEEE Transactions on Magnetics,2018

16. Gel-Integrated mercury-plated microelectrode arrays for trace metal detection,Zhi Cao, Haiping Shang*, Yinghui Wang, and Weibing Wang,ICEP 2019,2019

专利申请:

授权专利:

1. 应力匹配的双材料微悬臂梁的制造方法,201210024934X / 2016-04-07

2. 张应力LPCVD SiO2膜的制造方法,201110448748.4 / 2016-03-15

3. 硅腐蚀局部终止层制作方法,201210024545.7 / 2015-10-08

4. 采用KOH溶液的硅基MEMS器件湿法湿法方法,01210062362.4 / 2015-10-08

受理专利:

1. 一种电导率传感器及其制备方法,201811295869.8

2. 一种温盐溶解氧传感器及其制备方法,201811295868.3

3. 半导体器件与其制作方法,201811339671.5

4. 半导体器件与其制作方法,201811339676.8

5. 半导体器件和制作方法,201811314954.4

6. 一种压力传感器,201811296933.4

7. 一种压力传感器,201811296931.5

8. 一种压力传感器,201811296888.2

获奖及荣誉:

2018年JIEP Poster Award