- 李博
- 副研究员
- 北京市朝阳区北土城西路3号
简 历：
教育背景
2008年8月–2012年5月，法国里昂国立应用科学院，电力电子学与微电子学，博士
2005年9月–2008年1月，北京交通大学，微电子学与固体电子学，硕士
2001年9月–2005年7月，北京交通大学，电子工程系，本科
工作简历
2016年1月-至今，中国科学院微电子研究所，硅器件与集成研发中心，中国科学院硅器件技术重点实验室，项目研究员，副研究员，硕士生导师，学术秘书，研究生辅导员
2016年6月-2016年9月，法国国家科学院，法国里昂国立应用科学院，访问学者
2012年10月-2016年1月，中国科学院微电子研究所，硅器件与集成研发中心，助理研究员
社会任职：
中国科学院青年创新促进会会员
国家自然科学基金评议人
IEEE Member
中国科学院硅器件技术重点实验室学术秘书
中国核学会辐射物理分会会员
期刊《半导体学报》、《IEEE Transactions on Power Electronics》、《IEEE Transactions on Industrial Electronics》、《IEEE Transactions on Industrial Informatics》、《IEEE Transactions on Industry Applications》、《IEEE Industry Applications Magazine》、《IEEE Transactions on Nuclear Science》、《Electronics Letters》等20余本国内外期刊审稿人
研究方向：
半导体器件和集成电路辐照效应和抗辐射加固技术
承担科研项目情况：
2019.1-2022.12，国家自然科学基金面上项目，堆叠纳米线围栅器件的辐射损伤机理及在线增强自修复机制研究，主持
2016.1-2019.12，中国科学院青年创新促进会会员，主持
2014-2016，中法“蔡元培”交流合作项目，参与
代表论著：
期刊论文
1. Ningyang Liu, Qiao Wang, Bo Li, Junjun Wang, Kang Zhang, Chenguang He, Lei Wang, Ligang Song, Xingzhong Cao, Baoyi Wang, Dan Lin, Xiaoyan Liu, Wei Zhao, Zheng Gong, and Zhitao Chen, Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD, The Journal of Physical Chemistry C, 2019 123 (14), 8865-8870.
2. Li, Q., Li, B., Wang, L.*, Zheng, Z., Zhang, B.*, Liu, N.*, ... & Chen, Z. (2019). Comparison of 10 MeV Electron Beam Radiation Effect on InGaN/GaN and GaN/AlGaN Multiple Quantum Wells. Journal of Luminescence. 210, 2019, 169-174.
3. Zhang, G., Yang, J., Jiang, P., Bu, J., Li, B., & Li, B. (2018). Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs. Japanese Journal of Applied Physics, 57(10), 104201.
4. Jing Zhang, Xi Chen, Lei Wang, Zhongshan Zheng*, Huiping Zhu*, Bo Li*, Jinatou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions[J]. Journal of Applied Physics, 2019, 125(11): 115701.
5. Zhu, H. P., Zheng, Z. S.*, Li, B.*, Li, B. H., Zhang, G. P., Li, D. L., ... & Luo, J. J. (2018). Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation. Semiconductor Science and Technology, 33(11), 115010.
6. B. Li*, Y.-B. Huang, L. Yang, Q.-Z. Zhang, Z.-S. Zheng, B.-H. Li, H.-P. Zhu, J.-H. Bu, H.-X. Yin, J.-J. Luo, Z.-S. Han, H.-B. Wang, Process variation dependence of total ionizing dose effects in bulk nFinFETs, Microelectronics Reliability, 88–90, 2018, 946-951.
7. B. Li, Y. Huang, J. Wu*, Y. Huang, B. Li, Q. Zhang, L. Yang, F. Wan, J. Luo, Z. Han, H. Yin, Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment, Microelectronics Reliability, 88–90, 2018, 969-973.
8. 黄云波, 李博*, 杨玲, 郑中山, 李彬鸿, 罗家俊，体硅nFinFET总剂量效应三维TCAD仿真研究，微电子学与计算机.
9. 黄云波, 李博, 杨玲, 韩郑生, 罗家俊, 极端低温下SiGe HBT器件研究进展, 微电子学, 2017.10.20, (05): 695~700.
10. Huang, Y.*; Li, B.*; Zhao, X.; Zheng, Z.; Gao, J.; Zhang, G.; Li, B.*; Zhang, G.; Tang, K.; Han, Z. & Luo, J.*, An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure, IEEE Transactions on Nuclear Science, 2018, 65, 1532-1539.
11. Yang, L.*; Zhang, Q.; Huang, Y.; Zheng, Z.*; Li, B.*; Li, B.; Zhang, X.; Zhu, H.; Yin, H.*; Guo, Q.; Luo, J. & Han, Z., Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation, IEEE Transactions on Nuclear Science, 2018, 65, 1503-1510.
12. Wang, L.*; Liu, N.; Song, L.; Li, B.*; Liu, Y.*; Cui, Y.; Li, B.; Zheng, Z.; Chen,* Z.; Gong, Z.; Zhao, W.; Cao, X.; Wang, B.; Luo, J. & Han, Z., Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes, IEEE Transactions on Nuclear Science, 2018, 65, 2784-2792
13. Xiu, L., Zhang, W., Li, B.*, & Sun, Y. (2018). A digital dual-modulation control for single-phase UPS inverters. International Journal of Electronics, 105(11), 1900-1915.
14. Cui, Y., Zhu, H., Wang, L., Li, B., Han, Z., & Luo, J.* (2018). A new type of magnetism-controllable Mn-based single-molecule magnet. Journal of Magnetism and Magnetic Materials, 458, 90-94.
15. Cui Yan, Yang Ling, Gao Teng, Li Bo, Luo Jia-Jun. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices. Chinese Physics B, 2017, 26(8): 087501.
16. Yu Qiao-Qun, Lu Jiang, Liu Hai-Nan, Luo Jia-Jun, Li Bo, Wang Li-Xin, Han Zheng-Sheng. Superjunction nanoscale partially narrow mesa IGBT towards superior performance. Chinese Physics B, 2017, 26(3): 038502.
17. Bingqing Xie, Bo Li, Jinshun Bi, Jianhui Bu, Chi Wu, Binhong Li, Zhengsheng Han, Jiajun Luo. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices. Chinese Physics B,, 2016, 25(7):078501.
18. J. W. Zhang, C. Yin, C. Song, R. Liu and Bo Li*, Numerical simulation and experiments on mono-polar negative corona discharge applied in nanocomposites, IEEE Transactions on Dielectrics and Electrical Insulation, 2017, 24(2): 791-797.
19. Sun, J.-x., Mi, W., Zhang, D.-s., Yang, Z.-c., Zhang, K.-l., Han, Y.-m., Yuan, Y.-j., Zhao, J.-s., Li, B, Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering, Optoelectronics Letters, 2017, 13, 295-298.
20. He Bai, Jun Ma, Fang Wang, Yujie Yuan, Wei Li, Wei Mi, Yemei Han, Yue Li, Dengxuan Tang, Wei Zhao, Bo Li, Kailiang Zhang, A controllable synthesis of uniform MoS2 monolayers on annealed molybdenum foils, Materials Letters, 2017, 204, 35-38.
21. Jiang Lu, Hainan Liu, Xiaowu Cai, Jiajun Luo, Bo Li, Binhong Li, Lixin Wang, Zhengsheng Han, Single-Event Burnout Hardening of Planar Power MOSFET with Partially Widened Trench Source, Journal of Semiconductors, 2018, 39(3): 034003.
22. 于猛，曾传滨，闫薇薇，李博，高林春，罗家俊，韩郑生，基于PDSOI的锁相环电路单粒子瞬变敏感性研究，微电子学与计算机，2017，34(08)：76-81.
23. 王典，李博，赵宇红，李彬鸿，罗家俊，林雪芳，阿拉·布鲁诺，应用于Buck电路的滑模算法研究，微电子学，2017，47(04)：557-561.
24. 于猛，曾传滨，闫薇薇，李博，高林春，罗家俊，韩郑生，基于PDSOI的锁相环电路单粒子瞬变敏感性研究，微电子学与计算机，2017，34(08)：76-81.
25. 王典，李博*，赵宇红，李彬鸿，罗家俊，林雪芳，阿拉·布鲁诺，应用于Buck电路的滑模算法研究，微电子学，2017，47(04)：557-561.
26. Limei Xiu, Weiping Zhang, Bo Li*, and Yuansheng Liu, Digital Controller Candidate for Point-of-load Synchronous Buck Converter in Tri-mode Mechanism, Journal of Power Electronics, vol.14, no.4, 796-805, 2014.
27. 解冰清，毕津顺，李博，罗家俊，极端低温下硅基器件和电路特性研究进展，微电子学，2015.
28. 鲍进华，李博，曾传滨，高林春，毕津顺，刘海南，罗家俊，锁相环敏感模块的单粒子效应与设计加固[J]，半导体技术，2015，07：547-553.
29. 鲍进华，吕荫学，李博，曾传滨，毕津顺，罗家俊，一种基于标准CMOS工艺实现的锁相环电路[J]，电子设计工程，2015.
30. Bo Li, Xuefang Lin-Shi, Allard, B., Retif, J.-M., A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Sigma-Delta DPWM, IEEE Transactions on Industrial Informatics, vol.8, no.3, 472-481, 2012.
31. Bo Li, Xuefang Lin-Shi, Bruno Allard, Low Power Digital Alternative to Analog Control of Step-Down Converter, Journal of Low Power Electronics, vol.8, no.5, 654-666, 2012.
会议论文
1. Xiaohui Su, Bo Li*, Hainan Liu, Binhong Li, Lei Wang, Jiajun Luo, Zhengsheng Han, An SET Generation Circuit with Tunable Pulse Width, EDSSC 2019, Xi'an.
2. Xiaohui Su, Ming He, Mengxin Liu, Bo Li*, Hainan Liu, Binhong Li, Jiajun Luo, Zhengsheng Han*, An SET Pulse Widths Measurement Circuit with the Controllable Bilateral Edge Delay, ICREED 2019, Chongqing.
3. Li Duoli, Yu Meng, Zeng Chuanbin, Gao Linchun, Yan Weiwei, Li Bo*, et al, A Probabilistic Analysis Technique for Single Event Transient Sensitivity Evaluation of Phase-Lock-Loops, ESREF2019, France.
4. Fengyuan Zhang, Bo Li*, Qingzhu Zhang*, Binhong Li, Lei Wang, Yang Huang, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Impact of Total Ionizing Dose on the Threshold Voltage of FOI FinFET with a Property of Tunable Interface Defects, NSREC 2019, San Antonio, Texas, US, July 08-12, 2019.
5. Xuewen Zhang, Lei Wang, Bo Li*, Chunjun Liang, Huimin Zhang, Chao Ji, Fulin Sun, Jianqun Yang, Xinji Li, Jiantou Gao, Binhong Li, Mengxin Liu, Yang Huang, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Proton irradiation effect on high efficient organic-inorganic metal halide perovskite solar cell, NSREC 2019, San Antonio, Texas, US, July 08-12, 2019.
6. Mei Bo, Yu Qingkui, Zhang Hongwei, Tang Min, Zhao Xing, Li Bo, Zeng Chuanbin, Experimental study of single event transient characteristics on PDSOI CMOS inverter chain by pulse laser irradiation. RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
7. Lei Wang, Qingxuan Li, Ningyang Liu, Ligang Song, Bo Li, Binhong Li, Mengxin Liu, Yang Huang, Baoping, Zhang, Zhitao Chen, Xingzhong Cao, Baoyi Wang, Bo Mei, Comparison of 10 Mev Electron Beam Irradiation Effect on InGaN/GaN and AlGaN/GaN Multiple Quantum Well, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
8. Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Mei Bo, Chuanbin Zeng, Zhengsheng Han, Jiajun Luo, Radiation and Annealing Characteristics of Interface traps in SOI NMOSFETs by the Direct-Current Current-Voltage Technique, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
9. Li Huang, Tianyang Zhang, Bo Li, Yu Zhang, Yuhong Zhao, Houfang Liu, Yan Cui, Xiufeng Han, The total ionizing dose effect of magnetometers system based on tunneling magnetoresistance sensor, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
10.李博，黄云波，杨玲，郝乐，罗家俊，韩郑生，堆叠纳米线围栅器件的辐射与自加热协同效应仿真研究，第三届全国辐射物理学术交流会CRPS2018.
11. Bo Li, Shuo Guo, Le Hao, Jinshun Bi, Jiajun Luo, Zhengsheng Han, The dependence of single event effect on heavy ion angular irradiation by Geant4 simulation, RADECS Workshop 2018, Beijing, 2018.05.16-18.
12. Jiantou Gao, Binhong Li, Huang Yang, Bo Li, Fazhan Zhao, Chunlin Wang, Zhihang An, Zejun Cheng, Zhengsheng Han, Jiajun Luo, Gang Guo, Jie Liu, Back gate impact on SEU Characterization of a Double SOI 4k-bit SRAM, 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), Hawaii, US, 2018.07.16-20.
13. B. Lu, J. Huo, Y. Chen, B. Li, H. N. Liu, J. J. Luo and Y. M. Zhou, XCR4C: A rad-hard full-function CDS ASIC for X-ray CCD Applications, IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC 2018, Sydney, Australia, 2018.11.10-17.
14. Bo Li, Qingzhu Zhang, Ling Yang, Yunbo Huang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Mengxin Liu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han and Haibin Wang, Process variation dependence of total ionizing dose effects in bulk nFinFETs, ESREF 2018, Aalborg, Denmark, 2018.10.1-5.
15. Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han and Huaxiang Yin, Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment, ESREF 2018, Aalborg, Denmark, 2018.10.1-5.
16. Ling Yang, Yunbo Huang, Zhongshan Zheng, Bo Li, Binhong Li, Qingzhu Zhang, Xingyao Zhang, Huiping Zhu, Huaxiang Yin, Qi Guo, Jiajun Luo, Zhengsheng Han, Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs, 2017 Conference on Radiation and its Effects on Components and Systems, Geneva, 2017.10.2-2017.10.6
17. Yang Huang, Binhong Li, Xing Zhao, Zhongshan Zheng, Jiantou Gao, Gang Zhang, Bo Li, Guohe Zhang, Kai Tang, Zhengsheng Han , Jiajun Luo, An Effective Method to Compensate TID Induced Degradation on DSOI Structure, 2017 Conference on Radiation and its Effects on Components and Systems, Geneva, 2017.10.2-2017.10.6
18. Dian Wang, Yu-Hong Zhao, Bo Li, Bin-Hong Li and Jia-Jun Luo, The current observer design for buck converter, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 768-770.
19. Dian Wang, Yu-Hong Zhao, Bo Li*, Bin-Hong Li and Jia-Jun Luo, The current observer design for buck converter, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 768-770.
20. Bo Li, Jinshun Bi, Zhengsheng Han, Jiajun Luo, Xuefang Lin-Shi, Bruno Allard, Li Chen, A Digital Direct Controller for Buck Converter, ICSICT2014, Guilin, 2014.10.28-11.1.
21. Xuefang Lin-Shi, Bruno Allard, Jinshun Bi, Bo Li*, Stability Analysis for Integrated DC/DC Converters, ICSICT2014, Guilin, 2014.10.28-11.1.
22. Jinshun Bi, Bo Li, Zhengsheng Han, Jiajun Luo, Li Chen, Xuefang Lin-Shi, 3D TCAD Simulation of Single-event-effect in N-channel Transistor Based on Deep Sub-micron Fully-depleted Silicon-on-insulator Technology, ICSICT2014, Guilin, 2014.10.28-11.1.
23. Xie Bingqing, Luo Jiajun, Li Bo, Bi Jinshun, Bu Jianhui, Zhao Xing, Li Binhong, and Han Zhengsheng, The Effect of Cryogenic Temperature Characteristics on 0.18um Silicon-on-insulator Devices, ICREED2015, Harbin, 2015.
24. 郝乐，李博*，毕津顺，罗家俊，韩郑生，CMOS电路中的单粒子瞬变效应，ICREED2015，哈尔滨，2015.
25. Li Bo, Bi Jinshun, Luo Jia-Jun, Han Zheng-Sheng, Lin-Shi Xue-Fang, Allard Bruno, An SEE Prognostic Cell Embedded Rad-hard Digital Controller for Next Generation DC-DC Converter in Space, ICREED2015, Harbin, 2015.
26. 鲍进华，曾传滨，李博，高林春，刘海南，毕津顺，罗家俊，异步TSPC分频器的激光脉冲实验研究，第12届全国抗辐射电子学与电磁脉冲学术交流会，2015.
27. 吴驰，毕津顺，李博，韩郑生，罗家俊，0.13um PDSOI工艺下单粒子瞬态脉冲的产生与传播，第12届全国抗辐射电子学与电磁脉冲学术交流会，2015.
28. Bo Li, Xuefang Lin-Shi, Allard, B., Retif, J.-M., An FPGA Prototype of Current and Voltage Predictive Controller for High Switching Frequency Buck Converter, IECON 2012, 3024-3029, Montreal, 2012.10.25-28.
29. Bo Li, Shuibao Guo, Xuefang Lin-Shi, and Allard, B., MASH Δ-Σ DPWM Based Sliding-mode Controller Dedicating to High Frequency SMPS, EPE 2011, 1-9, Birmingham, 2011.08.30-09.1.
30. Bo Li, Shuibao Guo, Xuefang Lin-Shi, and Allard, B., Design and Implementation of the Digital Controller for Boost Converter based on FPGA, ISIE2011, 1549-1554, Gdansk, 2011.06.27-30.
31. Shuibao Guo, Xuefang Lin-Shi, Allard, B., Bo Li, Yanxia Gao, and Yi Ruan, High Resolution Digital PWM Controller for High-frequency Low-power SMPS, EPE 2009, 1-9, Barcelona, 2009.09.8-10.
32. Shuibao Guo, Xuefang Lin-Shi, Allard, B., Bo Li, Yanxia Gao, and Yi Ruan, A FPGA-prototype of a Sliding-mode-controller IC for High-switching-frequency DC-DC Converters, IECON 2009, 2895-2900, Porto, 2009.11.3-5.
专利申请：
1. 徐子轩，李博，刘海南，罗家俊，专利名称：带隙基准电压产生装置，中国，专利号：CN107870648A；
2 徐子轩，李博，赵博华，刘海南，罗家俊，专利名称：一种抗辐射带隙基准电路的加固方法，中国，专利号：CN108037789A。
获奖及荣誉：
2014年，微电子所第二届“科研新星”一等奖
2018年，微电子所“研究生喜爱的导师”
2018年，微电子所“优秀党员”
